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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier/Switch Transistor
Order this document by MMPQ3904/D
NPN Silicon
MMPQ3904
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
Motorola Preferred Device
16 1
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 -55 to +150 800 6.4 mW mW/C Watts mW/C C Value 40 60 6.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
CASE 751B-05, STYLE 4 SO-16
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 -- -- -- -- -- -- -- -- -- -- 50 50 Vdc Vdc Vdc nAdc nAdc
v 300 ms; Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996
1
MMPQ3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 75 VCE(sat) VBE(sat) -- -- 90 160 200 0.1 0.65 -- -- -- 0.2 0.85 Vdc Vdc --
DYNAMIC CHARACTERISTICS
Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 250 -- -- 300 2.0 4.0 -- 4.0 8.0 MHz pF pF
SWITCHING CHARACTERISTICS
Turn-On Time (IC = 10 Vdc, VBE(off) = -0.5 Vdc, IB1 = 1.0 mAdc) Turn-Off Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff -- -- 37 136 -- -- ns ns
v 300 ms; Duty Cycle v 2.0%.
2
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MMPQ3904
INFORMATION FOR USING THE SO-16 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.060 1.52
0.275 7.0
0.155 4.0
0.024 0.6
0.050 1.270
inches mm
SO-16 SO-16 POWER DISSIPATION
The power dissipation of the SO-16 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SO-16 package, PD can be calculated as follows: PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 800 milliwatts. PD = 150C - 25C 156C/W = 800 milliwatts
The 156C/W for the SO-16 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 800 milliwatts. There are other alternatives to achieving higher power dissipation from the SO-16 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
Motorola Small-Signal Transistors, FETs and Diodes Device Data
3
MMPQ3904
PACKAGE DIMENSIONS
-A-
16
9
-B-
1 8
P
8 PL
0.25 (0.010)
M
B
S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019
G
K C -T-
SEATING PLANE
R
X 45 _
F
DIM A B C D F G J K M P R
D
16 PL M
0.25 (0.010)
TB
S
A
S
M
J
CASE 751B-05 SO-16 ISSUE J
COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
*MMPQ3904/D*
MMPQ3904/D

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